MF213900 - SEMI MF2139 - Test Method for Measuring Nitrogen Concentration in Silicon Substrates by Secondary Ion Mass Spectrometry Revision:SEMI MF2139-1103 (Reapproved 1110) - Superseded SEMI E54-0316 (Reapproved 0124)

SEMI E54-0316 (Reapproved 0124)

Static-control methods can be incorporated in the factory design to reduce static charge to acceptable levels

指紋付きの評価は本標準の範囲外である。

and p- isomers) 99

The flashing tendency for semiconductor grade molding compounds depends on the interaction of several variables

MF213900 - SEMI MF2139 - Test Method for Measuring Nitrogen Concentration in Silicon Substrates by Secondary Ion Mass Spectrometry Revision:SEMI MF2139-1103 (Reapproved 1110) - Superseded SEMI E54-0316 (Reapproved 0124)Secondary ion mass spectrometry (SIMS) can measure in un annealed, polished Czochralski (CZ) silicon substrates the nitrogen concentration that may be intentionally introduced to: (1) increase the V G tolerance for grown in defects free region, where V is the pull rate and G is the crystal temperature gradient at the solid liquid interface; (2) increase the void free denuded zone depth and the bulk micro defect density after annealing in hydrogen or