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longer interconnects
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o substrates in one or more process modules where the recipe execution begins and ends simultaneously for all substrates in the process module
This Test Method is complementary to infrared spectroscopy
SEMI M70 — Test Method for Determining Wafer-Near-Edge Geometry Using Partial Wafer Site Flatness
MS00200 - SEMI MS2 - Test Method for Step Height Measurements of Thin Films Revision:SEMI MS2-1109 - Superseded longer interconnects1 Purpose 1. 1 This Test Method enables the determination of step height measurements of thin films. Step height measurements can be used to determine thin film thickness values. Thickness measurements are an aid in the design and fabrication of MEMS devices and can be used to obtain thin film material parameters, such as Youngs modulus. 2 Scope 2. 1 This Test Method presents a procedure for measuring step heights of thin films using step height test