MF039100 - SEMI MF391 - Test Method for Minority Carrier Diffusion Length in Extrinsic Semiconductors by Measurement of Steady-State Surface Photovoltage Revision:SEMI MF391-1106 - Superseded SEMI D76-0318 (first published)

SEMI D76-0318 (first published)

The accuracy of the coordinate data generated or used is equipment-dependent

SEMI E88-1103 (technical revision)

Three years of data with forecast through next year

It is suitable for use only on wafers with angular deviations in the range from −5° to +5°

MF039100 - SEMI MF391 - Test Method for Minority Carrier Diffusion Length in Extrinsic Semiconductors by Measurement of Steady-State Surface Photovoltage Revision:SEMI MF391-1106 - Superseded SEMI D76-0318 (first published)1 Purpose 1. 1 Minority carrier lifetime is one of the essential characteristics of semiconductor materials. In epitaxial layers and in thin single crystal wafers, the surface recombination corrections necessary to derive the minority carrier lifetime from the photoconductive decay (PCD) method covered by SEMI MF28 and SEMI MF1535 are excessively large. 1. 2 Therefore, other test methods are required to cover the measurement of minority carrier